a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/1 specifications are s ubject to change without characteristics t a = 25 o c none symbol test conditions minimum typical maximum units v g1s(off) v ds = 15 v v g2s = 4.0 v i d = 50 a -2.0 -4.0 v v g2s(off) v ds = 15 v v g1s = 0 v i d = 50 a -2.0 -4.0 v i g1ssf v g1s = 6.0 v v g2s = v ds = 0 v 50 a i g1ssr v g1s = -6.0 v v g2s = v ds = 0 v 50 a i g2ssf v g2s = 6.0 v v g1s = v ds = 0 v 50 a i g2ssr v g2s = -6.0 v v g1s = v ds = 0 v 50 a i ds v ds = 15 v v g1s = 0 v v g2s = 4.0 v 5.0 15 30 ma v (br)g1 i g1 = 100 a 9.0 v v (br)g2 i g2 = 100 a 9.0 v g fs v ds = 15 v v g2s = 4.0 v i d = 10 ma f = 1.0 khz 12000 mho c rss c iss c oss v ds = 15 v v g2s = 4.0 v i d = 10 ma f = 1.0 mhz 0.005 6.5 2.0 0.03 9.5 pf g ps nf v ds = 15 v v g2s = 4.0 v i d = 10 ma f = 200 mhz 19 24 2.0 3.5 db mos field-effect transistor 40822 description: the asi 40822 is a n-channel dual- gate depletion type transistor with monolithic gate protection diodes, used in rf,if amplifier and mixer applications up to 150 mhz. maximum ratings i d 50 ma v d 24 v p diss 330 mw @ t a = 25 o c t j -65 o c to +175 o c t stg -65 o c to +175 o c package style to-72 1 = drain 2 = gate #2 3 = gate #1 4 = source, case, and substrate
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